This reference book gives the reader a complete but comprehensive presentation of the foundations of convex analysis and presents applications to significant situations in engineering. The presentation of the theory is self-contained and the proof of all the essential results is given. The examples consider meaningful situations such as the modeling of curvilinear structures, the motion of a mass of people or the solidification of a material. Non convex situations are considered by means of relaxation methods and the connections between probability and convexity are explored and exploited in order to generate numerical algorithms.
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future - in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
This book presents recent and cutting edge advances in our understanding of key aspects of the response of materials under extreme loads that take place during high velocity impact and penetration. The focus of the content is on the numerous challenges associated with characterization and modeling of complex interactions that occur during these highly dynamic events. The following specific topics, among others, are addressed: characterization of material behavior under extreme loadings (estimate of damage, effects related to moisture contents, large pressures, large strain rates, etc.); measurement of microstructural changes associated with damage and mesoscopic scale modeling; macroscopic modeling, using the framework of the theory of viscoplasticity and damage; modeling and simulation of localization, cracking, and dynamic fragmentation of materials; application to penetration mechanics and trajectory instabilities. The book gathers together selected papers based on work presented as invited lectures at the 2nd US-France symposium held on 28-30 May 2008 in Rocamadour, France. The conference was organized by Eric Buzaud (DGA, Centre d'Études de Gramat) under the auspices of the International Center for Applied Computational Mechanics (ICACM).
